FKI10300

100 V, 23 A, 20.2 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI10300 Features  V(BR)DSS --------------------------------100 V (ID = 100 µA)  ID ---------------------------------------------------------- 23 A  RDS(ON) -------- 28.8 mΩ max. (VGS = 10 V, ID = 17.1 A)  Qg------16.9 nC (VGS = 4.5 V, VDS = 50 V, ID = 17.1 A) Package TO-220F  Low Total Gate Charge  High Speed Switching  Low On-Resistance  Capable of 4.5 V Gate Drive  100 % UIL Tested  RoHS Compliant Applications  DC-DC converters  Synchronous Rectification (1) (2) (3) s G D S Design Equivalent circuit Not to scale or New  Power Supplies D(2) G(1) S(3) ded f Absolute Maximum Ratings n  Unless otherwise specified, TA = 25 °C e Parameter Symbol m Drain to Source Voltage VDS m Gate to Source Voltage VGS o Continuous Drain Current ID ec Pulsed Drain Current IDM R Continuous Source Current (Body Diode) IS t Pulsed Source Current No (Body Diode) ISM Test conditions TC = 25 °C PW ≤ 100µs Duty cycle ≤ 1 % PW ≤ 100µs Duty cycle ≤ 1 % VDD = 50 V, L = 1 mH, Rating 100 ± 20 23 47 23 47 Unit V V A A A A Single Pulse Avalanche Energy EAS IAS = 9.4 A, unclamped, RG = 4.7 Ω 89 mJ Refer to Figure 1 Avalanche Current IAS 16.7 A Power Dissipation PD TC = 25 °C 38 W Operating Junction Temperature TJ 150 °C Storage Temperature Range TSTG − 55 to 150 °C FKI10300-DS Rev.1.4 SANKEN ELECTRIC CO.,LTD. 1 May. 29, 2014 http://www.sanken-ele.co.jp FKI10300 Thermal Characteris...