isc N-Channel MOSFET Transistor
FMH07N90E
·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(...
isc N-Channel MOSFET
Transistor
FMH07N90E
·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.0Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching
regulators ·UPS (Uninterruptible Power Supply) ·DC-DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Plused
28
A
PD
Total Dissipation @TC=25℃
145
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.86 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient
50
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-voltage
IS= 7A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 3.5A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=900V; VGS= 0
FMH07N90E
MIN TYPE MAX UNIT
900
V
3.5
4.5
V
1.35
V
2.0
Ω
±100 nA
25
µA
NO...
