FQP50N06L

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting equipment ideal for monitor’s B+ function ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±25 V Drain Current-continuous@ TC=25℃ 50 ID A Drain Current-continuous@ TC=100℃ 35.4 PD Power Dissipation @TC=25℃ 120 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W FQP50N06L isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 25A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 VSD Diode Forward Voltage IF= 50A; VGS= 0 FQP50N06L MIN MAX UNIT 60 V 1 2.5 V 0.022 Ω ±100 nA 1 u...