N-Channel MOSFET. FQU10N20 Datasheet

FQU10N20 MOSFET. Datasheet pdf. Equivalent

Part FQU10N20
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Low On-Resistan.
Manufacture INCHANGE
Datasheet
Download FQU10N20 Datasheet

        FQU10N20 Datasheet
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Vol FQU10N20 Datasheet
FQD10N20C / FQU10N20C FQD10N20C / FQU10N20C 200V N-Channel FQU10N20C Datasheet
FQD10N20L / FQU10N20L December 2000 QFET FQD10N20L / FQU10 FQU10N20L Datasheet
Recommendation Recommendation Datasheet FQU10N20 Datasheet




FQU10N20
isc N-Channel MOSFET Transistor
·FEATURES
·Drain Source Voltage-
: VDSS= 200V(Min)
·Low On-Resistance
: RDS(on) = 0.36Ω(Max)
·100% Avalanche Tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power factor correction
·Switched mode power supplies
·Uninterruptible Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Plused
PD
Total Dissipation @TC=25
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
FQU10N20
VALUE
200
±30
7.6
30
55
150
-55~150
UNIT
V
V
A
A
W
MAX
2.27
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



FQU10N20
isc N-Channel MOSFET Transistor
FQU10N20
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
200
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
2
4
V
VSD
Diode Forward On-voltage
IS= 7.6A ;VGS= 0
1.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 3.8A
0.36
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=200V; VGS= 0
VDS=160V; VGS= 0;TC=125
1
µA
10
TO-251 outline dimensional drawing
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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