FQU10N20

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Low On-Resistance : RDS(on) = 0.36Ω(Max) ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power factor correction ·Switched mode power supplies ·Uninterruptible Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Plused PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case FQU10N20 VALUE 200 ±30 7.6 30 55 150 -55~150 UNIT V V A A W ℃ ℃ MAX 2.27 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor FQU10N20 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 200 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2 4 V VSD Diode Forward On-voltage IS= 7.6A ;VGS= 0 1.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3.8A 0.36 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=200V; VGS= 0 VDS=160V; VGS= 0;TC=125℃ 1 µA 10 TO-251 outline dimensional drawing isc website：www.iscsemi.com 2 isc & iscsem...