isc N-Channel MOSFET Transistor
IPA60R199CP, IIPA60R199CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.199...
isc N-Channel MOSFET
Transistor
IPA60R199CP, IIPA60R199CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.199Ω ·High peak current capability ·Enhancement mode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Hard switching SMPS topologies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
16
IDM
Drain Current-Single Pulsed
51
PD
Total Dissipation @TC=25℃
34
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.7 80
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
IPA60R199CP, IIPA60R199CP
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
600
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.66mA
2.5
3.5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=9.9A
0.199 Ω
IGSS
Gate-Source Leakage Current
VGS=20V; VDS= 0V
100
nA
VDS=600V; VGS= 0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V;Tj= 150℃
1
μA
10
μA
VSD
Diode forward voltage
IF =9.9A; VGS = 0V
1.2
V
NOTICE： ISC reserves th...
