IPB048N15N5LF

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 120 A ID(puls) Pulse Drain Current 480 A Ptot Total Dissipation@TC=25℃ 313 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.40 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62 ℃/W IPB048N15N5LF . isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPB048N15N5LF ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 150 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 3.3 4.9 V VSD Diode Forward On-Voltage IF=100A ;VGS= 0 1.2 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=100A 4.8 mΩ IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±5 µA IDSS Zero Gate Voltage Drain Current VDS= 120V; VGS= 0 VDS= 120V; VGS= 0;Tj =125℃ 2 µA 100 Qg Gate Charge Total VDS=75V, ID=70A, VGS...