N-Channel MOSFET. IPD033N06N Datasheet

IPD033N06N MOSFET. Datasheet pdf. Equivalent

Part IPD033N06N
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FEATURES ·Static drain-source on-resistanc.
Manufacture INCHANGE
Datasheet
Download IPD033N06N Datasheet

isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N ·FE IPD033N06N Datasheet
IPD033N06N MOSFET OptiMOSTMPower-Transistor,60V Features IPD033N06N Datasheet
Recommendation Recommendation Datasheet IPD033N06N Datasheet




IPD033N06N
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N
·FEATURES
·Static drain-source on-resistance:
RDS(on)3.3m
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Optimized for synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
90
IDM
Drain Current-Single Pulsed
360
PD
Total Dissipation @TC=25
107
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX
1.4
62
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark



IPD033N06N
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06N
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=50μA
60
V
2.1
3.3
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=90A
3.3 mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=60V; VGS= 0V
VSD
Diode forward voltage
IF=45A, VGS = 0V
0.1
μA
1
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)