IPD050N10N5

IPD050N10N5 MOSFET OptiMOSTM5Power-Transistor,100V Features N-channel,normallevel ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Idealforhigh-frequencyswitchingandsynchronousrectification Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 5.0 mΩ ID 80 A QOSS 67 nC QG(0V..10V) 51 nC D-PAK tab 1 2 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPD050N10N5 Package P-TO252-3 Marking 050N10N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2017-01-17 OptiMOSTM5Power-Transistor,100V IPD050N10N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electri...