IPD50R280CE

isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤280mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18.1 IDM Drain Current-Single Pulsed 42.9 PD Total Dissipation @TC=25℃ 119 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.05 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=350μA RDS(on) Drain-Source On-Resistance VGS=13V; ID=4.2A IGSS Gate-Source Leakage Current VGS=20V IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V VSD Diode forward voltage IF=5.2A, VGS = 0V MIN TYP MAX UNIT 500 V 2.5 3.5 V 280 mΩ 0.1 μA 1 μA 0.85 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The...