Document
isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
50
IDM
Drain Current-Single Pulsed
350
PD
Total Dissipation @TC=25℃
56
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 2.7 75
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
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isc N-Channel MOSFET Transistor IPD060N03L, IIPD060N03L
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=1mA
30
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=250μA
1
V
2.2
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=30A
6
mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=30V; VGS= 0V
VSD
Diode forward voltage
IF=30A, VGS = 0V
0.1
μA
1
μA
1.1
V
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
.