IPD60R2K0C6

isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 2.4 IDM Drain Current-Single Pulsed 6 PD Total Dissipation @TC=25℃ 22.3 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 5.6 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.06mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=0.76A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=0.9A, VGS = 0V MIN TYP MAX UNIT 600 V 2.5 3.5 V 2 Ω 0.1 μA 1 μA 0.9 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. Th...