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IPD60R170CFD7
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPD60R170CFD7,IIPD60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤170mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB...
INCHANGE
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