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IPD60R400CE Dataheets PDF



Part Number IPD60R400CE
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPD60R400CE DatasheetIPD60R400CE Datasheet (PDF)

isc N-Channel MOSFET Transistor IPD60R400CE,IIPD60R400CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 14.7 IDM Drain Current-Single Pulsed 30 PD Total Dissipation @TC=25.

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