DatasheetsPDF.com

IPD60R600E6 Dataheets PDF



Part Number IPD60R600E6
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPD60R600E6 DatasheetIPD60R600E6 Datasheet (PDF)

isc N-Channel MOSFET Transistor IPD60R600E6,IIPD60R600E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 19 PD Total Dissipation @TC=25℃.

  IPD60R600E6   IPD60R600E6


IPD60R600CP IPD60R600E6 IPD60R600P6


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)