DatasheetsPDF.com

IPD60R650CE Dataheets PDF



Part Number IPD60R650CE
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPD60R650CE DatasheetIPD60R650CE Datasheet (PDF)

isc N-Channel MOSFET Transistor IPD60R650CE,IIPD60R650CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.65Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 9.9 IDM Drain Current-Single Pulsed 19 PD Total Dissipation @TC=25.

  IPD60R650CE   IPD60R650CE


IPD60R600P7S IPD60R650CE IPD60R750E6


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)