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IPD60R800CE
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IPD60R800CE,IIPD60R800CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage...
INCHANGE
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