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IPD65R380E6 Dataheets PDF



Part Number IPD65R380E6
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPD65R380E6 DatasheetIPD65R380E6 Datasheet (PDF)

isc N-Channel MOSFET Transistor IPD65R380E6,IIPD65R380E6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.38Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 10.6 IDM Drain Current-Single Pulsed 29 PD Tota.

  IPD65R380E6   IPD65R380E6


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