IPD068P03L3

isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤6.8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175°C operating junction temperature ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -70 IDM Drain Current-Single Pulsed -280 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.5 50 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -0.15mA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -70A IGSS Gate-Source Leakage Current VGS= -20V;VDS= 0V IDSS Drain-Source Leakage Current VDS= -30V; VGS= 0V VSD Diode forward voltage IF= -70A, VGS = 0V MIN TYP MAX UNIT -30 V -1.0 -2.0 V 6.8 mΩ -0.1 μA -1 μA -1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the dat...