OptiMOSTM P3 Power-Transistor
Features • single P-Channel in DPAK • Qualified according JEDEC1) for target applications
...
OptiMOSTM P3 Power-
Transistor
Features single P-Channel in DPAK Qualified according JEDEC1) for target applications
175 °C operating temperature 100% Avalanche tested Pb-free; RoHS compliant, halogen free applications: power management Halogen-free according to IEC61249-2-21
IPD068P03L3 G
Product Summary
VDS RDS(on),max
IDD
VGS = 10V VGS = 4.5V
-30 V 6.8 mW 11.0 -70 A
PG-TO252-3
Type IPD068P03L3 G
Package
Marking
PG-TO252-3 068P03L
Lead free Yes
Packing non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature
ID
T C=25 °C
T C=100 °C
I D,pulse T C=25 °C2)
E AS
I D=-70 A, R GS=25 W
V GS
P tot
T C=25 °C
T j, T stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22
Value
-70 -70 -280 149 ±20 100 -55 ... 175 tbd 260 55/175/56
Unit A
mJ V W °C
°C
Rev. 2.1
page 1
2014-05-16
Parameter
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
Symbol Conditions
IPD068P03L3 G
min.
Values typ.
Unit max.
R thJC
-
R thJA 6 cm2 cooling area2)
-
-
1.5 K/W
-
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250mA
-30
-
-V
Gate threshold voltage
V...
