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IPD640N06L Dataheets PDF



Part Number IPD640N06L
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPD640N06L DatasheetIPD640N06L Datasheet (PDF)

OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID IPD640N06L G 60 V 64 mΩ 18 A Type IPD640N06L G TPyapcekage IMPaDr6k4in0gN06L G PG-TO252-3 640NP0G6L-TO252-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C P.

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OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID IPD640N06L G 60 V 64 mΩ 18 A Type IPD640N06L G TPyapcekage IMPaDr6k4in0gN06L G PG-TO252-3 640NP0G6L-TO252-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C Pulsed drain current I D,pulse T C=100 °C T C=25 °C1) Avalanche energy, single pulse E AS I D=18 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=18 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1) See figure 3 www.DRateavS.he1e.t44U.net page 1 Value 18 12 72 43 6 ±20 47 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C 2008-09-01 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) IPD640N06L G min. Values typ. Unit max. - - 3.2 K/W - - 75 - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance V (BR)DSS V GS=0 V, I D=1 mA 60 V GS(th) V DS=V GS, I D=16 µA 1.2 I DSS V DS=60 V, V GS=0 V, T j=25 °C - V DS=60 V, V GS=0 V, T j=125 °C - I GSS V GS=20 V, V DS=0 V - R DS(on) V GS=10 V, I D=18 A - V GS=4.5 V, I D=12 A - RG - g fs |V DS|>2|I D|R DS(on)max, I D=18 A 9.5 1.6 0.01 1 10 47 64 1.2 19 -V 2 1 µA 100 100 nA 64 mΩ 85 -Ω -S 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.4 page 2 2008-09-01 Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol Conditions IPD640N06L G min. Values typ. Unit max. C iss - C oss V GS=0 V, V DS=30 V, f =1 MHz - C rss - t d(on) - tr V DD=30 V, V GS=10 V, - t d(off) I D=15 A, R G=22 Ω - tf - 350 470 pF 94 130 35 53 6 8 ns 25 38 32 48 32 48 Q gs - 1.4 1.9 nC Q g(th) - 0.5 0.7 Q gd V DD=30 V, I D=18 A, - 3.6 5.4 Q sw V GS=0 to 10 V - 4.5 6.5 Qg - 10 13 V plateau - 4.2 -V Q oss V DD=30 V, V GS=0 V - 3 4 IS I S,pulse T C=25 °C .


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