Document
OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
IPD640N06L G
60 V 64 mΩ 18 A
Type
IPD640N06L G
TPyapcekage IMPaDr6k4in0gN06L G
PG-TO252-3 640NP0G6L-TO252-3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
Pulsed drain current
I D,pulse
T C=100 °C T C=25 °C1)
Avalanche energy, single pulse
E AS
I D=18 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=18 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
www.DRateavS.he1e.t44U.net
page 1
Value 18 12 72 43
6
±20 47 -55 ... 175 55/175/56
Unit A
mJ kV/µs V W °C
2008-09-01
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area2)
IPD640N06L G
min.
Values typ.
Unit max.
-
-
3.2 K/W
-
-
75
-
-
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Gate resistance Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
60
V GS(th) V DS=V GS, I D=16 µA
1.2
I DSS
V DS=60 V, V GS=0 V, T j=25 °C
-
V DS=60 V, V GS=0 V, T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=18 A
-
V GS=4.5 V, I D=12 A
-
RG
-
g fs
|V DS|>2|I D|R DS(on)max, I D=18 A
9.5
1.6 0.01
1 10 47 64 1.2 19
-V 2 1 µA
100 100 nA 64 mΩ 85
-Ω -S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.4
page 2
2008-09-01
Parameter
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
IPD640N06L G
min.
Values typ.
Unit max.
C iss
-
C oss
V GS=0 V, V DS=30 V, f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=30 V, V GS=10 V,
-
t d(off)
I D=15 A, R G=22 Ω
-
tf
-
350
470 pF
94
130
35
53
6
8 ns
25
38
32
48
32
48
Q gs
-
1.4
1.9 nC
Q g(th)
-
0.5
0.7
Q gd
V DD=30 V, I D=18 A,
-
3.6
5.4
Q sw
V GS=0 to 10 V
-
4.5
6.5
Qg
-
10
13
V plateau
-
4.2
-V
Q oss
V DD=30 V, V GS=0 V
-
3
4
IS I S,pulse
T C=25 °C
.