IPP039N04L

isc N-Channel MOSFET Transistor IPP039N04L,IIPP039N04L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.9mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching for SMPS ·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 400 PD Total Dissipation @TC=25℃ 94 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.6 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP039N04L,IIPP039N04L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=45μA 40 V 1.2 2 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=80A 3.9 mΩ IGSS Gate-Source Leakage Current VGS=20V;VDS=0V IDSS Drain-Source Leakage Current VDS=40V; VGS= 0V VSD Diode forward voltage IF =80A; VGS = 0 V 100 nA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the...