IPP50R140CP

isc N-Channel MOSFET Transistor IPP50R140CP，IIPP50R140CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.14Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 23 IDM Drain Current-Single Pulsed 56 PD Total Dissipation @TC=25℃ 192 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.5 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP50R140CP，IIPP50R140CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.93mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=14A IGSS Gate-Source Leakage Current VGS=20V;VDS=0V IDSS Drain-Source Leakage Current VDS=500V; VGS= 0V VSD Diode forward voltage IF=14A; VGS = 0V MIN TYP MAX UNIT 500 V 2.5 3.5 V 0.14 Ω 0.1 μA 2 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the con...