IPP052N06L3

isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching for SMPS ·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 80 IDM Drain Current-Single Pulsed 320 PD Total Dissipation @TC=25℃ 115 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.3 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP052N06L3,IIPP052N06L3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=58μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=80A IGSS Gate-Source Leakage Current VGS=20V;VDS=0V IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V VSD Diode forward voltage IF =80A; VGS = 0 V MIN TYP MAX UNIT 40 V 1.2 2.2 V 4.7 mΩ 100 nA 1 μA 1.2 V NOTICE： ISC reserves the rights to make change...