isc N-Channel MOSFET Transistor IPP057N08N3, IIPP057N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.7mΩ ...
isc N-Channel MOSFET
Transistor IPP057N08N3, IIPP057N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤5.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
80
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
80
IDM
Drain Current-Single Pulsed
320
PD
Total Dissipation @TC=25℃
150
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor IPP057N08N3, IIPP057N08N3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =90μA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=80A
IGSS
Gate-Source Leakage Current
VGS=20V;VDS=0V
IDSS
Drain-Source Leakage Current VDS=80V; VGS= 0V
VSD
Diode forward voltage
IF=80A, VGS = 0 V
MIN TYP MAX UNIT
80
V
2.0
3.5
V
5.7 mΩ
0.1
μA
1
μA
1.2
V
NOTICE: ISC reserves the rights to make changes of the con...