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IPP60R170CFD7

INCHANGE

N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP60R170CFD7,IIPP60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.1...


INCHANGE

IPP60R170CFD7

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isc N-Channel MOSFET Transistor IPP60R170CFD7,IIPP60R170CFD7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.17Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·This new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 14 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25℃ 75 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.67 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP60R170CFD7,IIPP60R170CFD7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.3mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=6A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF...




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