isc N-Channel MOSFET Transistor IPP60R170CFD7,IIPP60R170CFD7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.1...
isc N-Channel MOSFET
Transistor IPP60R170CFD7,IIPP60R170CFD7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.17Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·This new product series blends all advantages of a fast switching
technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
14
IDM
Drain Current-Single Pulsed
51
PD
Total Dissipation @TC=25℃
75
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.67 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor IPP60R170CFD7,IIPP60R170CFD7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =0.3mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=6A
IGSS
Gate-Source Leakage Current
VGS=20V; VDS=0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward voltage
IF...