isc N-Channel MOSFET Transistor
IPP60R280P6,IIPP60R280P6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.28Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not
sacrific...