DatasheetsPDF.com

IPP60R600CP

INCHANGE

N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP60R600CP,IIPP60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·...


INCHANGE

IPP60R600CP

File Download Download IPP60R600CP Datasheet


Description
isc N-Channel MOSFET Transistor IPP60R600CP,IIPP60R600CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 6.1 IDM Drain Current-Single Pulsed 15 PD Total Dissipation @TC=25℃ 60 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.1 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP60R600CP,IIPP60R600CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.22mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=3.3A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=3.3A; VGS = 0V MIN TYP MAX UNIT 600 V 2.5 3.5 V 0.6 Ω 0.1 μA 1 μA 1.2 V NOTICE: ISC reserves the rights to make changes of the ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)