isc N-Channel MOSFET Transistor
IPP65R074C6，IIPP65R074C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.074Ω...
isc N-Channel MOSFET
Transistor
IPP65R074C6，IIPP65R074C6
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.074Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not
sacrificing ease of use
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
57.7
IDM
Drain Current-Single Pulsed
151
PD
Total Dissipation @TC=25℃
480.8
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.26 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
IPP65R074C6，IIPP65R074C6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =1.4mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=13.9A
IGSS
Gate-Source Leakage Current
VGS=20V; VDS=0V
IDSS
Drain-Source Leakage Current
VDS=650V; VGS= 0V
VSD
Diode forward voltage
IF=20.8A; VGS = 0V
MIN TYP MAX UNIT
650
V
2.5
3.5
V
0.074 Ω
0.1
μA
5
μA
0.9
V
NOTICE： ISC res...
