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IPP65R190C6

N-Channel MOSFET

Description

isc N-Channel MOSFET Transistor IPP65R190C6，IIPP65R190C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease ...

INCHANGE

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