isc N-Channel MOSFET Transistor
IPP90R500C3，IIPP90R500C3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.5Ω ·...
isc N-Channel MOSFET
Transistor
IPP90R500C3，IIPP90R500C3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.5Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·High peak current capability ·Ultra low gate charge
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
900
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
11
IDM
Drain Current-Single Pulsed
24
PD
Total Dissipation @TC=25℃
156
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.8 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
IPP90R500C3，IIPP90R500C3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA
900
V
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =0.74mA
2.5
3.5
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=6.6A
0.5
Ω
IGSS
Gate-Source Leakage Current
VGS=20V; VDS=0V
0.1
μA
VDS=900V; VGS= 0V
IDSS
Drain-Source Leakage Current
VDS=900V; VGS= 0V;Tj=150℃
1 μA
10
VSD
Diode forward voltage
IF=6.6A; VGS = 0V
1.2
V
NOTICE： ISC reserves the r...
