IPP100N08N3

isc N-Channel MOSFET Transistor IPP100N08N3，IIPP100N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤9.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 70 IDM Drain Current-Single Pulsed 280 PD Total Dissipation @TC=25℃ 100 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.5 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP100N08N3，IIPP100N08N3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =46μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=46A IGSS Gate-Source Leakage Current VGS=20V;VDS=0V IDSS Drain-Source Leakage Current VDS=80V; VGS= 0V VSD Diode forward voltage IF=46A, VGS = 0V MIN TYP MAX UNIT 80 V 2.0 3.5 V 9.7 mΩ 0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the con...