IPP147N12N3

isc N-Channel MOSFET Transistor IPP147N12N3，IIPP147N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤14.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 120 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 224 PD Total Dissipation @TC=25℃ 107 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.4 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP147N12N3，IIPP147N12N3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=61μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=56A IGSS Gate-Source Leakage Current VGS= 20V;VDS=0V IDSS Drain-Source Leakage Current VDS=100V; VGS= 0V VSD Diode forward voltage IF=56A; VGS = 0V MIN TYP MAX UNIT 120 V 2 4 V 14.7 mΩ 0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of th...