IPW60R041C6

isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤41mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 77.5 IDM Drain Current-Single Pulsed 272 PD Total Dissipation @TC=25℃ 481 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.26 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=2.96mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=44.4A 41 mΩ IGSS Gate-Source Leakage Current VGS= 20V; VDS= 0V 0.1 μA VDS=600V; VGS= 0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V;Tj=150℃ 5 μA 50 μA VSD Diode forward voltage IF=44.4A, VGS = 0V 0.9 V NOTICE： ISC reserves the rights to make changes of the content herein the...