IPW65R190E6

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤190mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.2 IDM Drain Current-Single Pulsed 66 PD Total Dissipation @TC=25℃ 151 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.83 62 UNIT ℃/W ℃/W IPW65R190E6 IIPW65R190E6 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.73mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=7.3A IGSS Gate-Source Leakage Current VGS= 20V; VDS=0V IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V VSD Diode forward voltage IF=11A, VGS = 0V IPW65R190E6 IIPW65R190E6 MIN TYP MAX UNIT 650 V 2.5 3.5 V 190 mΩ 0.1 mA 1 μA V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. Th...