IRF60R217

isc N-Channel MOSFET Transistor IRF60R217, IIRF60R217 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous rectifier applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 58 IDM Drain Current-Single Pulsed 217 PD Total Dissipation @TC=25℃ 83 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.8 110 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRF60R217, IIRF60R217 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID=85μA 60 V 2.1 3.7 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=35A 9.9 mΩ IGSS Gate-Source Leakage Current VGS=±20V;VDS= 0V IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V VSD Diode forward voltage IS=35A, VGS = 0V ±0.1 μA 1 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without not...