isc N-Channel MOSFET Transistor IRF135B203,IIRF135B203
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.4mΩ ·En...
isc N-Channel MOSFET
Transistor IRF135B203,IIRF135B203
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
135
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
129
IDM
Drain Current-Single Pulsed
512
PD
Total Dissipation @TC=25℃
441
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.34 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor IRF135B203,IIRF135B203
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=77A
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current
VDS=135V; VGS= 0V
VSD
Diode forward voltage
IF=77A; VGS = 0V
MIN TYP MAX UNIT
135
V
2
4
V
8.4 mΩ
±0.1 μA
20
μA
1.3
V
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