IRF1310N

isc N-Channel MOSFET Transistor IRF1310N，IIRF1310N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.036Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 42 IDM Drain Current-Single Pulsed 140 PD Total Dissipation @TC=25℃ 160 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.95 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=22A IGSS Gate-Source Leakage Current VGS=±20V IDSS Drain-Source Leakage Current VDS=100V; VGS= 0V VSD Diode forward voltage IS=22A, VGS = 0V IRF1310N，IIRF1310N MIN TYP MAX UNIT 100 V 2.0 4.0 V 0.036 Ω ±0.1 μA 25 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the content h...