N-Channel MOSFET
IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.25 A, 350-400V
Description
These devices are n-channel, enhancem...
Description
IRF710-713 / MTP2N35 / 2N40
N-Channel Power MOSFETs, 2.25 A, 350-400V
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits.
z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling
TO-220AB
IRF711 IRF712 IRF713 MTP2N35 MTP2N40
Maximum Ratings
Symbol
VDSS VDGR VGS TJ,Tsgt TL
Characteristic
Drain to Source Voltage1 Drain to Gate Voltage1 RGS=20k Ω Gate to Source Voltage Operating Junction and Storage Temperatures Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5 s
Rating IRF710/712 MTP2N40 400 400
±20 -55 to +150
275
Maximum On-State Characteristics
RDS(on) ID
Static Drain-to-Source On Resistance
Drain Current Continuous at Tc=25¥ Continuous at Tc=100¥ Pulsed
IRF710-711 3.6
1.5 1.0 6.0
Maximum On-State Characteristics
R ӨJC
Thermal Resistance
6.4
Junction to Case
R ӨJA
Thermal Resistance,
80
Junction to Ambient
PD
Total Power Dissipation
20
at Tc=25¥
Notes
For information concerning connection diagram and package outline, refer to
Section 7.
Rating IRF711/713 MTP2N35 350 350
±20 -55 to +150
275
IRF712-713 5.0
1.4 0.9 5.0
6.4
80
20
Unit V V
V ¥
¥
NTP2N35/40 Unit
5.0
Ω
A 1.3 0.8 5.0
2.5
¥/W
80
¥/W
50
W
w...
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