isc P-Channel MOSFET Transistor
IRF9530N,IIRF9530N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.2Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Combine with the fast switching speed and ruggedized device
design,provide the designer with an extremely e...
