IRFB31N20D

isc N-Channel MOSFET Transistor IRFB31N20D，IIRFB31N20D ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤82mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Frequency DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 124 PD Total Dissipation @TC=25℃ 200 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.75 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFB31N20D，IIRFB31N20D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=18A IGSS Gate-Source Leakage Current VGS= ±30V IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V VSD Diode forward voltage IF=18A; VGS = 0V MIN TYP MAX UNIT 200 V 3 5.5 V 82 mΩ ±0.1 μA 25 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any ...