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IRFB33N15D Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | IRFB33N15D |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel MOSFET Transistor
IRFB33N 15D,IIRFB33N15D
·FEATURES ·Static dr ain-source on-resistance:
RDS(on) ≤56 mΩ ·Enhancement mode ·Fast Switchin g Speed ·100% avalanche tested ·Minim um Lot-to-Lot variations for robust dev ice
performance and reliable operation
·DESCRITION ·High frequency DC-DC co nverters
·ABSOLUTE MAXIMUM RATINGS(Ta =25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate- Source Voltage
±30
ID
Drain Current -Continuous
33
IDM
Drain Current-Sin gle Pulsed
130
PD
Total Dissipation @TC=25℃
170
Tj
Max. Operating Junc tion Temperature 175 Tstg Sto . |
| Manufacture | INCHANGE |
| Datasheet |
| Part | IRFB33N15D |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel MOSFET Transistor
IRFB33N 15D,IIRFB33N15D
·FEATURES ·Static dr ain-source on-resistance:
RDS(on) ≤56 mΩ ·Enhancement mode ·Fast Switchin g Speed ·100% avalanche tested ·Minim um Lot-to-Lot variations for robust dev ice
performance and reliable operation
·DESCRITION ·High frequency DC-DC co nverters
·ABSOLUTE MAXIMUM RATINGS(Ta =25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate- Source Voltage
±30
ID
Drain Current -Continuous
33
IDM
Drain Current-Sin gle Pulsed
130
PD
Total Dissipation @TC=25℃
170
Tj
Max. Operating Junc tion Temperature 175 Tstg Sto . |
| Manufacture | INCHANGE |
| Datasheet |
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