IRFB3004

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.75mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·Hard Switched and High Frequency Circuits ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 340 IDM Drain Current-Single Pulsed 1310 PD Total Dissipation @TC=25℃ 380 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 0.4 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250µA VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=195A IGSS Gate-Source Leakage Current VGS=± 20V IDSS Drain-Source Leakage Current VDS=40V; VGS= 0V VSD Diode forward voltage IS =195A, VGS = 0 V IRFB3004,IIRFB3004 MIN TYP MAX UNIT 40 V 2 4 V 3.0 mΩ ±100 nA 20 μA 1.3 V ...