IRFB3806

isc N-Channel MOSFET Transistor IRFB3806，IIRFB3806 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤15.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for High speed power switching and high efficiency synchronous rectification in SMPS ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 43 IDM Drain Current-Single Pulsed 170 PD Total Dissipation @TC=25℃ 71 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.12 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =50μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=25A IGSS Gate-Source Leakage Current VGS=±20V IDSS Drain-Source Leakage Current VDS=60V; VGS= 0V VSD Diode forward voltage IS=25A, VGS = 0 V IRFB3806，IIRFB3806 MIN TYP MAX UNIT 60 V 2 4 V 15.8 mΩ ±100 nA 20 μA 1.3 V NOTICE： ISC reserves the rights to ma...