isc N-Channel MOSFET Transistor IRFB4115G,IIRFB4115G
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤11mΩ ·Enhan...
isc N-Channel MOSFET
Transistor IRFB4115G,IIRFB4115G
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
104
IDM
Drain Current-Single Pulsed
420
PD
Total Dissipation @TC=25℃
380
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.4 62
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
IRFB4115G,IIRFB4115G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =250μA
MIN TYP MAX UNIT
150
V
3
5
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=62A
11
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V
IDSS
Drain-Source Leakage Current
VDS=150V; VGS= 0V
VSD
Diode forward voltage
Is=62A; VGS = 0V
±0.1 μA
20
μA
1.3
V
NOTICE: ISC reserves the rights to make changes ...