IRFB4510PbF

PD - 97772 IRFB4510PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET® Power MOSFET D VDSS 100V RDS(on) typ. 10.7mΩ max. 13.5mΩ S ID (Silicon Limited) 62A D DS G TO-220AB IRFB4510PbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) c Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage e Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) d Single Pulse Avalanche Energy IAR EAR Avalanche Current f Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter i Junction-to-Case RθCS RθJA Case-to-Sink, Flat Greased Surface i Junction-to-Ambient, TO-220 www.irf.com Max. 62 44 250 140 0.95 ± 20 3.2 -55 to + 175 300 x x 10lb in (1.1N m) 130 See Fig. 14, 15, 22a, 22b, Typ. ––– 0.50 ––– Max. 1.05 ––– 62 Units A W W/°C V V/ns °C mJ A mJ Units °...