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IRFB5615
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IRFB5615，IIRFB5615 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤39mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and high repetitive peak current capability ·ABSO...
INCHANGE
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