IRFB5620

isc N-Channel MOSFET Transistor IRFB5620，IIRFB5620 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤72.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·175℃ operating junction temperature and repetitive avalanche capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 25 IDM Drain Current-Single Pulsed 100 PD Total Dissipation @TC=25℃ 144 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.045 62 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFB5620，IIRFB5620 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =100μA RDS(on) Drain-Source On-Resistance VGS=10V; ID=15A MIN TYP MAX UNIT 200 V 3 5 V 72.5 mΩ IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V VSD Diode forward voltage Is=15A; VGS = 0V ±0.1 μA 20 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the ...