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IRFSL7530PbF

International Rectifier

Power MOSFET

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-brid...


International Rectifier

IRFSL7530PbF

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Description
Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant StrongIRFET™ IRFB7530PbF IRFS7530PbF IRFSL7530PbF HEXFET® Power MOSFET D VDSS 60V RDS(on) typ. 1.65m G max 2.00m ID (Silicon Limited) 295A S ID (Package Limited) 195A GDS TO-220AB IRFB7530PbF G Gate D D S G D2Pak IRFS7530PbF D Drain S GD TO-262 IRFSL7530PbF S Source Base part number Package Type IRFB7530PbF IRFSL7530PbF IRFS7530PbF TO-220 TO-262 D2-Pak Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number IRFB7530PbF IRFSL7530PbF IRFS7530PbF IRFS7530TRLPbF RDS(on), Drain-to -Source On Resistance (m) ID, Drain Current (A) 7 ID = 100A 6 5 4 TJ = 125°C 3 2 TJ = 25°C 1 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com © 2014 International Rectifier 300 250 Limited by package 200 150 100 50 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedb...




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