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IRFIRLML2502TRPBF Dataheets PDF



Part Number IRFIRLML2502TRPBF
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRFIRLML2502TRPBF DatasheetIRFIRLML2502TRPBF Datasheet (PDF)

isc N-Channel MOSFET Transistor IRFIRLML2502TRPBF ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤45mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Provides the designer with an extremely efficient and reliable device for use in battery and load management. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous .

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isc N-Channel MOSFET Transistor IRFIRLML2502TRPBF ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤45mΩ ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Provides the designer with an extremely efficient and reliable device for use in battery and load management. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-a) Channel-to-ambient thermal resistance VALUE 20 ±12 4.2 33 1.25 150 -55~150 UNIT V V A A W ℃ ℃ MAX 100 UNIT ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFIRLML2502TRPBF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA MIN TYP MAX UNIT 20 V 0.6 1.2 V RDS(on) Drain-Source On-Resistance VGS=4.5V; ID=4.2A VGS=2.5V; ID=3.6A IGSS Gate-Source Leakage Current VGS= ±12V VDS=16V; VGS= 0V IDSS Drain-Source Leakage Current VDS=16V; VGS= 0V; Tj= 70℃ VSD Diode forward voltage IS=1.3A; VGS = 0V 0.045 Ω 0.08 ±100 nA 1 μA 25 1.2 V OUTLINE DRAWING isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFIRLML2502TRPBF NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 3 isc & iscsemi is registered trademark .


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