IRFP048N

isc N-Channel MOSFET Transistor IRFP048N，IIRFP048N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤16mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra Low On-resistance ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 64 IDM Drain Current-Single Pulsed 210 PD Total Dissipation @TC=25℃ 140 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.1 40 UNIT ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFP048N，IIRFP048N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=250μA 55 VGS(th) Gate Threshold Voltage VDS=VGS; ID=250μA 2.0 V 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=37A 16 mΩ IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=55V; VGS= 0V VSD Diode forward voltage IS=37A, VGS = 0V ±0.1 μA 25 μA 1.3 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati...